Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V60 V
Current - Continuous Drain (Id) @ 25°C
1.3A (Ta)3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4V, 10V
Rds On (Max) @ Id, Vgs
85mOhm @ 1.5A, 10V175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.6 nC @ 4.5 V12.3 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
64.3 pF @ 25 V606 pF @ 20 V
Power Dissipation (Max)
500mW (Ta)600mW (Ta)
Supplier Device Package
X1-DFN1616-6 (Type E)X2-DFN1006-3
Package / Case
3-XFDFN6-PowerUFDFN
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
X2-DFN1006-3
DMN2300UFB4-7B
MOSFET N-CH 20V 1.3A 3DFN
Diodes Incorporated
409,954
In Stock
1 : ¥2.46000
Cut Tape (CT)
10,000 : ¥0.40433
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
1.5V, 4.5V
175mOhm @ 300mA, 4.5V
950mV @ 250µA
1.6 nC @ 4.5 V
±8V
64.3 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
X1-DFN1616-6
DMN6070SFCL-7
MOSFET N-CH 60V 3A X1-DFN1616-6
Diodes Incorporated
3,318
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥1.20096
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta)
4V, 10V
85mOhm @ 1.5A, 10V
3V @ 250µA
12.3 nC @ 10 V
±20V
606 pF @ 20 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1616-6 (Type E)
6-PowerUFDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.