Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRFB4227PBF MOSFET N-CH 200V 65A TO220AB Infineon Technologies	4,555 In Stock	1 : ¥26.68000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	65A (Tc)	10V	24mOhm @ 46A, 10V	5V @ 250µA	98 nC @ 10 V	±30V	4600 pF @ 25 V	-	330W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
STP11NK50Z MOSFET N-CH 500V 10A TO220AB STMicroelectronics	722 In Stock	1 : ¥17.24000 Tube	SuperMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	10A (Tc)	10V	520mOhm @ 4.5A, 10V	4.5V @ 100µA	68 nC @ 10 V	±30V	1390 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
PJA3433-AU_R1_000A1 SOT-23, MOSFET Panjit International Inc.	37,515 In Stock	1 : ¥2.13000 Cut Tape (CT) 3,000 : ¥0.43980 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	1.1A (Ta)	1.8V, 4.5V	370mOhm @ 1.1A, 4.5V	1.3V @ 250µA	1.6 nC @ 4.5 V	±8V	125 pF @ 15 V	-	1.25W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.