Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI2333-TP MOSFET P-CH 12V 6A SOT23 Micro Commercial Co	43,762 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.71245 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	6A (Tc)	4.5V	150mOhm @ 500mA, 1.5V	1V @ 250µA	2 nC @ 4.5 V	±8V	1275 pF @ 6 V	-	350mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IRFR7440TRPBF MOSFET N-CH 40V 90A DPAK Infineon Technologies	16,573 In Stock	1 : ¥11.99000 Cut Tape (CT) 2,000 : ¥4.96542 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	90A (Tc)	6V, 10V	2.4mOhm @ 90A, 10V	3.9V @ 100µA	134 nC @ 10 V	±20V	4610 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
NP50P06KDG-E1-AY MOSFET P-CH 60V 50A TO263 Renesas Electronics Corporation	4,874 In Stock	1 : ¥22.99000 Cut Tape (CT) 800 : ¥12.87441 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	17mOhm @ 25A, 10V	2.5V @ 1mA	95 nC @ 10 V	±20V	5000 pF @ 10 V	-	1.8W (Ta), 90W (Tc)	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.