Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IPD60R180P7SAUMA1 MOSFET N-CH 600V 18A TO252-3 Infineon Technologies	32,803 In Stock	1 : ¥13.38000 Cut Tape (CT) 2,500 : ¥5.52228 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IMW120R220M1HXKSA1 SICFET N-CH 1.2KV 13A TO247-3 Infineon Technologies	1,255 In Stock	1 : ¥54.60000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	13A (Tc)	15V, 18V	286mOhm @ 4A, 18V	5.7V @ 1.6mA	8.5 nC @ 18 V	+23V, -7V	289 pF @ 800 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.