Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMG1013UW-7 MOSFET P-CH 20V 820MA SOT323 Diodes Incorporated	247,125 In Stock 2,184,000 Factory	1 : ¥2.79000 Cut Tape (CT) 3,000 : ¥0.46763 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	820mA (Ta)	1.8V, 4.5V	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.622 nC @ 4.5 V	±6V	59.76 pF @ 16 V	-	310mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
ISC022N10NM6ATMA1 TRENCH >=100V PG-TSON-8 Infineon Technologies	6,022 In Stock	1 : ¥38.01000 Cut Tape (CT) 5,000 : ¥17.75781 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	25A (Ta), 230A (Tc)	8V, 10V	2.24mOhm @ 50A, 10V	3.3V @ 147µA	91 nC @ 10 V	±20V	6880 pF @ 50 V	-	3W (Ta), 254W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
IPD530N15N3GATMA1 MOSFET N-CH 150V 21A TO252-3 Infineon Technologies	2,395 In Stock	1 : ¥11.00000 Cut Tape (CT) 2,500 : ¥4.54098 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	21A (Tc)	8V, 10V	53mOhm @ 18A, 10V	4V @ 35µA	12 nC @ 10 V	±20V	887 pF @ 75 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.