Single FETs, MOSFETs

Results: 8
Manufacturer
Infineon TechnologiesIXYSonsemiSTMicroelectronicsVishay Siliconix
Series
-CoolMOS™FDmesh™HEXFET®PolarP2™SuperMESH™UniFET™
Product Status
ActiveLast Time BuyObsolete
Drain to Source Voltage (Vdss)
200 V500 V550 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)17A (Tc)20A (Tc)24A (Tc)65A (Tc)
Rds On (Max) @ Id, Vgs
24mOhm @ 46A, 10V199mOhm @ 9.9A, 10V250mOhm @ 10A, 10V250mOhm @ 12A, 10V260mOhm @ 10A, 10V270mOhm @ 12A, 10V270mOhm @ 8.5A, 10V320mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 660µA4.5V @ 100µA4.5V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V48 nC @ 10 V53 nC @ 10 V65 nC @ 10 V98 nC @ 10 V110 nC @ 10 V119 nC @ 10 V130 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 25 V1800 pF @ 100 V2600 pF @ 25 V2760 pF @ 25 V2870 pF @ 25 V2890 pF @ 25 V3390 pF @ 25 V4600 pF @ 25 V
Power Dissipation (Max)
139W (Tc)190W (Tc)192W (Tc)220W (Tc)250W (Tc)280W (Tc)330W (Tc)480W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PG-TO220-3-1TO-220TO-220-3TO-220ABTO-247-3
Package / Case
TO-220-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
8Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRFB4227PBF
MOSFET N-CH 200V 65A TO220AB
Infineon Technologies
4,560
In Stock
1 : ¥26.68000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
65A (Tc)
10V
24mOhm @ 46A, 10V
5V @ 250µA
98 nC @ 10 V
±30V
4600 pF @ 25 V
-
330W (Tc)
-40°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-247-3 HiP
STW20NK50Z
MOSFET N-CH 500V 17A TO247-3
STMicroelectronics
165
In Stock
1 : ¥31.03000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
17A (Tc)
10V
270mOhm @ 8.5A, 10V
4.5V @ 100µA
119 nC @ 10 V
±30V
2600 pF @ 25 V
-
190W (Tc)
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
TO-220AB
IRFB17N50LPBF
MOSFET N-CH 500V 16A TO220AB
Vishay Siliconix
1,557
In Stock
1 : ¥47.45000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
500 V
16A (Tc)
10V
320mOhm @ 9.9A, 10V
5V @ 250µA
130 nC @ 10 V
±30V
2760 pF @ 25 V
-
220W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
FDP20N50F
MOSFET N-CH 500V 20A TO220-3
onsemi
172
In Stock
1 : ¥24.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
20A (Tc)
10V
260mOhm @ 10A, 10V
5V @ 250µA
65 nC @ 10 V
±30V
3390 pF @ 25 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220AB
IRFB20N50KPBF
MOSFET N-CH 500V 20A TO220AB
Vishay Siliconix
740
In Stock
1 : ¥41.30000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
500 V
20A (Tc)
10V
250mOhm @ 12A, 10V
5V @ 250µA
110 nC @ 10 V
±30V
2870 pF @ 25 V
-
280W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
STP20NM50FD
MOSFET N-CH 500V 20A TO220AB
STMicroelectronics
992
In Stock
1 : ¥38.75000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
20A (Tc)
10V
250mOhm @ 10A, 10V
5V @ 250µA
53 nC @ 10 V
±30V
1380 pF @ 25 V
-
192W (Tc)
-65°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
TO-220-3
IPP50R199CPXKSA1
MOSFET N-CH 550V 17A TO220-3
Infineon Technologies
476
In Stock
1 : ¥27.91000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
550 V
17A (Tc)
10V
199mOhm @ 9.9A, 10V
3.5V @ 660µA
45 nC @ 10 V
±20V
1800 pF @ 100 V
-
139W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO-220-3
IXTP460P2
MOSFET N-CH 500V 24A TO220AB
IXYS
275
In Stock
1 : ¥43.84000
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
24A (Tc)
10V
270mOhm @ 12A, 10V
4.5V @ 250µA
48 nC @ 10 V
±30V
2890 pF @ 25 V
-
480W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.