Single FETs, MOSFETs

Results: 4
Manufacturer
Nexperia USA Inc.STMicroelectronics
Series
-STripFET™ F6STripFET™ II
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)25A (Tc)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
15mOhm @ 25A, 10V35mOhm @ 12.5A, 10V38mOhm @ 12.5A, 10V117mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA2.7V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V52 nC @ 5 V55 nC @ 10 V65.5 nC @ 10 V
Vgs (Max)
±16V±18V±20V
Input Capacitance (Ciss) (Max) @ Vds
196 pF @ 30 V1550 pF @ 25 V1710 pF @ 25 V3525 pF @ 25 V
Power Dissipation (Max)
615mW (Ta), 7.5W (Tc)58W (Tc)100W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
DPAKTO-236AB
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
MFG_DPAK(TO252-3)
STD25NF10LT4
MOSFET N-CH 100V 25A DPAK
STMicroelectronics
6,113
In Stock
1 : ¥17.32000
Cut Tape (CT)
2,500 : ¥7.79915
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
25A (Tc)
4.5V, 10V
35mOhm @ 12.5A, 10V
2.5V @ 250µA
52 nC @ 5 V
±16V
1710 pF @ 25 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-236AB
PMV88ENER
PMV88ENE/SOT23/TO-236AB
Nexperia USA Inc.
5,215
In Stock
1 : ¥2.79000
Cut Tape (CT)
3,000 : ¥0.76179
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.2A (Ta)
4.5V, 10V
117mOhm @ 2.2A, 10V
2.7V @ 250µA
6 nC @ 10 V
±20V
196 pF @ 30 V
-
615mW (Ta), 7.5W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
MFG_DPAK(TO252-3)
STD26NF10
MOSFET N-CH 100V 25A DPAK
STMicroelectronics
4,279
In Stock
1 : ¥13.22000
Cut Tape (CT)
2,500 : ¥5.48267
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
25A (Tc)
10V
38mOhm @ 12.5A, 10V
4V @ 250µA
55 nC @ 10 V
±20V
1550 pF @ 25 V
-
100W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD45P4LLF6AG
MOSFET P-CH 40V 50A DPAK
STMicroelectronics
3,473
In Stock
1 : ¥11.82000
Cut Tape (CT)
2,500 : ¥4.89127
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
50A (Tc)
4.5V, 10V
15mOhm @ 25A, 10V
2.5V @ 250µA
65.5 nC @ 10 V
±18V
3525 pF @ 25 V
-
58W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.