Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V100 V150 V
Current - Continuous Drain (Id) @ 25°C
770mA (Ta), 1.29A (Tc)930mA (Ta), 1.55A (Tc)1.9A (Ta)2.5A (Ta)3.3A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
60mOhm @ 3.2A, 10V250mOhm @ 1.9A, 10V300mOhm @ 2.5A, 10V980mOhm @ 900mA, 10V1.38Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id
2V @ 165µA2V @ 270µA2.2V @ 250µA4V @ 250µA4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V7.2 nC @ 10 V10.8 nC @ 10 V11.6 nC @ 10 V13.9 nC @ 10 V15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 15 V350 pF @ 50 V420 pF @ 30 V530 pF @ 75 V601 pF @ 30 V
Power Dissipation (Max)
1.1W (Ta), 1.7W (Tc)1.8W (Ta), 4.2W (Tc)1.8W (Ta), 5W (Tc)3W (Ta)
Supplier Device Package
PG-SOT223-4SOT-223-4SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2304DDS-T1-GE3
MOSFET N-CH 30V 3.3A/3.6A SOT23
Vishay Siliconix
47,915
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.90839
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.3A (Ta), 3.6A (Tc)
4.5V, 10V
60mOhm @ 3.2A, 10V
2.2V @ 250µA
6.7 nC @ 10 V
±20V
235 pF @ 15 V
-
1.1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT223-3L
NDT2955
MOSFET P-CH 60V 2.5A SOT-223-4
onsemi
1,492
In Stock
1 : ¥5.42000
Cut Tape (CT)
4,000 : ¥2.06661
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
2.5A (Ta)
4.5V, 10V
300mOhm @ 2.5A, 10V
4V @ 250µA
15 nC @ 10 V
±20V
601 pF @ 30 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
SOT-223-4
ISP25DP06NMXTSA1
MOSFET P-CH 60V 1.9A SOT223-4
Infineon Technologies
3,703
In Stock
1 : ¥6.08000
Cut Tape (CT)
1,000 : ¥2.57648
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.9A (Ta)
10V
250mOhm @ 1.9A, 10V
4V @ 270µA
10.8 nC @ 10 V
±20V
420 pF @ 30 V
-
1.8W (Ta), 4.2W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
ISP98DP10LMXTSA1
ISP98DP10LMXTSA1
SMALL SIGNAL MOSFETS PG-SOT223-4
Infineon Technologies
425
In Stock
1 : ¥5.34000
Cut Tape (CT)
1,000 : ¥2.27001
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
930mA (Ta), 1.55A (Tc)
4.5V, 10V
980mOhm @ 900mA, 10V
2V @ 165µA
7.2 nC @ 10 V
±20V
350 pF @ 50 V
-
1.8W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
ISP14EP15LMXTSA1
ISP14EP15LMXTSA1
SMALL SIGNAL MOSFETS PG-SOT223-4
Infineon Technologies
899
In Stock
1 : ¥5.66000
Cut Tape (CT)
1,000 : ¥2.40662
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
770mA (Ta), 1.29A (Tc)
4.5V, 10V
1.38Ohm @ 800mA, 10V
2V @ 270µA
11.6 nC @ 10 V
±20V
530 pF @ 75 V
-
1.8W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
SOT-223-4
ISP25DP06LMXTSA1
MOSFET P-CH 60V 1.9A SOT223-4
Infineon Technologies
829
In Stock
1 : ¥6.73000
Cut Tape (CT)
1,000 : ¥2.86432
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.9A (Ta)
4.5V, 10V
250mOhm @ 1.9A, 10V
2V @ 270µA
13.9 nC @ 10 V
±20V
420 pF @ 30 V
-
1.8W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.