Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SQS481ENW-T1_GE3 MOSFET P-CH 150V 4.7A PPAK1212-8 Vishay Siliconix	14,698 In Stock	1 : ¥6.98000 Cut Tape (CT) 3,000 : ¥2.87600 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	4.7A (Tc)	10V	1.095Ohm @ 5A, 10V	3.5V @ 250µA	11 nC @ 10 V	±20V	385 pF @ 75 V	-	62.5W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
SI2324DS-T1-BE3 MOSFET N-CH 100V 2.3A SOT-23 Vishay Siliconix	8,743 In Stock	1 : ¥5.09000 Cut Tape (CT) 3,000 : ¥1.71229 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	1.6A (Ta), 2.3A (Tc)	4.5V, 10V	234mOhm @ 1.5A, 10V	2.8V @ 250µA	10.4 nC @ 10 V	±20V	190 pF @ 50 V	-	1.25W (Ta), 2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
NVDS015N15MCT4G PTNG 150V 15MOHM DPAK AUTOMOTIVE onsemi	2,886 In Stock 27,500 Factory	1 : ¥15.76000 Cut Tape (CT) 2,500 : ¥7.10660 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	10.5A (Ta), 61.3A (Tc)	10V	15mOhm @ 29A, 10V	4.5V @ 162µA	27 nC @ 10 V	±20V	2120 pF @ 75 V	-	3.1W (Ta), 107.1W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.