Single Bipolar Transistors

Results: 3
Manufacturer
Micro Commercial CoonsemiRenesas Electronics Corporation
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Box (TB)Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
200 mA600 mA2 A
Voltage - Collector Emitter Breakdown (Max)
40 V50 V300 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A1V @ 50mA, 500mA1.5V @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 10V100 @ 150mA, 10V120 @ 500mA, 2V
Power - Max
350 mW1 W
Frequency - Transition
50MHz100MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
3-SSIPTO-226-3, TO-92-3 Long Body, Formed LeadsTO-236-3, SC-59, SOT-23-3
Supplier Device Package
-SOT-23TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23
MMBT2222A-TP
TRANS NPN 40V 0.6A SOT23
Micro Commercial Co
1,421,168
In Stock
1 : ¥0.82000
Cut Tape (CT)
3,000 : ¥0.14156
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
-
100 @ 150mA, 10V
350 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
TO-92-3 Formed Leads
KSA1281YTA
TRANS PNP 50V 2A TO92-3
onsemi
3,172
In Stock
1 : ¥3.45000
Cut Tape (CT)
2,000 : ¥1.14847
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
2 A
50 V
500mV @ 50mA, 1A
100nA (ICBO)
120 @ 500mA, 2V
1 W
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body, Formed Leads
TO-92-3
INFINFIPAN60R360PFD7SXKSA1
2SC3209-T-AZ
SMALL SIGNAL BIPOLAR TRANSTR NPN
Renesas Electronics Corporation
66,259
Marketplace
Unavailable
Unavailable in your selected currency
-
Bulk
Active
NPN
200 mA
300 V
1.5V @ 5mA, 50mA
100nA (ICBO)
60 @ 10mA, 10V
1 W
50MHz
150°C (TJ)
Through Hole
3-SSIP
-
Showing
of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.