Single Bipolar Transistors

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Box (TB)Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
150 mA500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V80 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)
100nA100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 1V120 @ 2mA, 6V
Power - Max
225 mW400 mW
Frequency - Transition
80MHz100MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
MMBTA06LT1G
TRANS NPN 80V 0.5A SOT23-3
onsemi
323,350
In Stock
1 : ¥1.48000
Cut Tape (CT)
3,000 : ¥0.25552
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
500 mA
80 V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
225 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
TO-92-3 Formed Leads
KSA1015YTA
TRANS PNP 50V 0.15A TO92-3
onsemi
3,354
In Stock
1 : ¥3.20000
Cut Tape (CT)
2,000 : ¥0.70206
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
150 mA
50 V
300mV @ 10mA, 100mA
100nA (ICBO)
120 @ 2mA, 6V
400 mW
80MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.