Single Bipolar Transistors

Results: 4
Manufacturer
Central Semiconductor CorpComchip Technologyonsemi
Packaging
BagBulk
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
50 mA200 mA
Voltage - Collector Emitter Breakdown (Max)
30 V40 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA400mV @ 5mA, 50mA500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
50nA (ICBO)100nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 100mA, 1V100 @ 10mA, 1V300 @ 100µA, 5V
Frequency - Transition
50MHz250MHz300MHz
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device Package
TO-92TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3(StandardBody),TO-226_straightlead
2N3904BU
TRANS NPN 40V 0.2A TO92-3
onsemi
97,563
In Stock
1 : ¥2.87000
Bulk
-
Bulk
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
TO-92-3 Formed Leads
2N3906-G
TRANS PNP 40V 0.2A TO92
Comchip Technology
21,091
In Stock
1 : ¥2.71000
Bag
-
Bag
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
100nA (ICBO)
30 @ 100mA, 1V
-
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
TO-92-3(StandardBody),TO-226_straightlead
2N3906BU
BJT TO92 40V PNP 0.625W 150C
onsemi
19,286
In Stock
50,000
Factory
1 : ¥2.79000
Bulk
-
Bulk
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
631
In Stock
1 : ¥3.86000
Bulk
-
Bulk
Active
NPN
50 mA
30 V
500mV @ 1mA, 10mA
50nA (ICBO)
300 @ 100µA, 5V
625 mW
50MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
Showing
of 4

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.