Single Bipolar Transistors

Results: 2
Manufacturer
onsemiSTMicroelectronics
Transistor Type
NPNPNP - Darlington
Current - Collector (Ic) (Max)
1 A5 A
Vce Saturation (Max) @ Ib, Ic
700mV @ 125mA, 1A4V @ 20mA, 5A
Current - Collector Cutoff (Max)
300µA500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A, 4V1000 @ 3A, 3V
Frequency - Transition
3MHz-
Operating Temperature
-65°C ~ 150°C (TJ)150°C (TJ)
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Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-220-3
TIP127
TRANS PNP DARL 100V 5A TO220
STMicroelectronics
2,801
In Stock
1 : ¥6.32000
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PNP - Darlington
5 A
100 V
4V @ 20mA, 5A
500µA
1000 @ 3A, 3V
2 W
-
150°C (TJ)
Through Hole
TO-220-3
TO-220
TO-220-3
TIP29CG
TRANS NPN 100V 1A TO220
onsemi
0
In Stock
Check Lead Time
1 : ¥14.04000
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NPN
1 A
100 V
700mV @ 125mA, 1A
300µA
15 @ 1A, 4V
2 W
3MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.