Single Bipolar Transistors

Results: 3
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
200 mA1.5 A2.5 A
Voltage - Collector Emitter Breakdown (Max)
20 V40 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 50mA, 2.5A220mV @ 50mA, 1.5A300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V200 @ 2A, 2V300 @ 100mA, 2V
Power - Max
300 mW625 mW
Frequency - Transition
140MHz180MHz300MHz
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
MMBT3904LT1G
TRANS NPN 40V 0.2A SOT23-3
onsemi
1,345,368
In Stock
1 : ¥0.99000
Cut Tape (CT)
3,000 : ¥0.17514
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
300 mW
300MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
SOT-23-3
FMMT718TA
TRANS PNP 20V 1.5A SOT23-3
Diodes Incorporated
24,290
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥1.12521
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
1.5 A
20 V
220mV @ 50mA, 1.5A
100nA
300 @ 100mA, 2V
625 mW
180MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SOT-23-3
FMMT618TA
TRANS NPN 20V 2.5A SOT23-3
Diodes Incorporated
13,245
In Stock
2,346,000
Factory
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.55327
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
2.5 A
20 V
200mV @ 50mA, 2.5A
100nA
200 @ 2A, 2V
625 mW
140MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.