Single Bipolar Transistors

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Collector (Ic) (Max)
800 mA6 A
Voltage - Collector Emitter Breakdown (Max)
45 V100 V
Vce Saturation (Max) @ Ib, Ic
340mV @ 500mA, 5A450mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A, 2V250 @ 100mA, 1V
Power - Max
250 mW3 W
Frequency - Transition
100MHz130MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Supplier Device Package
SOT-223-3TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-223-3
FZT853TA
TRANS NPN 100V 6A SOT223-3
Diodes Incorporated
105,061
In Stock
5,000
Factory
1 : ¥5.42000
Cut Tape (CT)
1,000 : ¥2.87343
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
NPN
6 A
100 V
340mV @ 500mA, 5A
10nA (ICBO)
100 @ 2A, 2V
3 W
130MHz
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-261-4, TO-261AA
SOT-223-3
TO-236AB
BCW66HVL
BCW66HSOT23TO-236AB
Nexperia USA Inc.
82,735
In Stock
1 : ¥1.48000
Cut Tape (CT)
10,000 : ¥0.15283
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
800 mA
45 V
450mV @ 50mA, 500mA
5µA (ICBO)
250 @ 100mA, 1V
250 mW
100MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.