Single Bipolar Transistors

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
500 mA3 A
Voltage - Collector Emitter Breakdown (Max)
45 V50 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA1V @ 200mA, 2A
Current - Collector Cutoff (Max)
100nA1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 500mA, 3V160 @ 100mA, 1V
Power - Max
350 mW15 W
Frequency - Transition
100MHz110MHz
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
SOT-23-3TO-252-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT-23-3
BC817-25Q-7-F
TRANS NPN 45V 0.5A SOT23-3
Diodes Incorporated
58,433
In Stock
396,000
Factory
1 : ¥1.48000
Cut Tape (CT)
3,000 : ¥0.25119
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
500 mA
45 V
700mV @ 50mA, 500mA
100nA
160 @ 100mA, 1V
350 mW
100MHz
-65°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2DB1184Q-13
2DB1184Q-13
TRANS PNP 50V 3A TO252-3
Diodes Incorporated
2,437
In Stock
132,500
Factory
1 : ¥4.93000
Cut Tape (CT)
2,500 : ¥1.65112
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
3 A
50 V
1V @ 200mA, 2A
1µA (ICBO)
120 @ 500mA, 3V
15 W
110MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-3
Showing
of 2

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.