Single Bipolar Transistors

Showing

of 2

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

JANS2N3700UB TRANS NPN 80V 1A UB Microchip Technology	95 In Stock	1 : ¥317.38000 Bulk	-	Bulk	Active	NPN	1 A	80 V	500mV @ 50mA, 500mA	10nA	50 @ 500mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Military	MIL-PRF-19500/391	Surface Mount	4-SMD, No Lead	UB
2N3700UB TRANS NPN 80V 1A UB Microchip Technology	0 In Stock Check Lead Time	1 : ¥82.75000 Bulk	-	Bulk	Active	NPN	1 A	80 V	500mV @ 50mA, 500mA	10nA	50 @ 500mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	-	-	Surface Mount	3-SMD, No Lead	UB

Showing

of 2

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.