Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

BD139 TRANS NPN 80V 1.5A SOT32-3 STMicroelectronics	2,983 In Stock	1 : ¥3.37000 Tube	-	Tube	Active	NPN	1.5 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1.25 W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32-3
BD140 TRANS PNP 80V 1.5A SOT32-3 STMicroelectronics	2,632 In Stock	1 : ¥3.69000 Tube	-	Tube	Active	PNP	1.5 A	80 V	500mV @ 50mA, 500mA	100nA (ICBO)	40 @ 150mA, 2V	1.25 W	-	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32-3

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Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.