Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

MSC080SMA330B4 MOSFET SIC 3300 V 80 MOHM TO-247 Microchip Technology	41 In Stock	1 : ¥1,133.45000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	41A (Tc)	20V	105mOhm @ 30A, 20V	2.97V @ 3mA	55 nC @ 20 V	+23V, -10V	3462 pF @ 2400 V	-	381W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
BSD214SNH6327XTSA1 MOSFET N-CH 20V 1.5A SOT363-6 Infineon Technologies	14,907 In Stock	1 : ¥3.20000 Cut Tape (CT) 3,000 : ¥0.70946 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	1.5A (Ta)	2.5V, 4.5V	140mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.8 nC @ 5 V	±12V	143 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT363-PO	6-VSSOP, SC-88, SOT-363

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.