Single FETs, MOSFETs

Results: 5
Manufacturer
EPCInfineon TechnologiesonsemiVishay Siliconix
Series
-eGaN®OptiMOS™QFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)28A (Ta), 203A (Tc)48A (Tc)101A (Ta)300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V6V, 10V10V
Rds On (Max) @ Id, Vgs
1.2mOhm @ 100A, 10V1.8mOhm @ 50A, 5V2.1mOhm @ 50A, 10V14mOhm @ 10A, 10V135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 14mA3.5V @ 250µA3.8V @ 275µA4V @ 250µA4V @ 330µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 5 V27 nC @ 10 V35 nC @ 10 V85 nC @ 10 V231 nC @ 10 V
Vgs (Max)
+6V, -4V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V1700 pF @ 25 V3200 pF @ 50 V5530 pF @ 40 V16250 pF @ 40 V
Power Dissipation (Max)
2.5W (Ta), 44W (Tc)3.8W (Ta), 200W (Tc)68W (Tc)375W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Mounting Type
Surface MountSurface Mount, Wettable Flank
Supplier Device Package
5-DFNW (4.9x5.9) (8-SOFL-WF)7-QFN (3x5)PG-HSOF-8-1PowerPAK® SO-8TO-252AA
Package / Case
7-PowerWQFN8-PowerSFN8-PowerTDFN, 5 LeadsPowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-252AA
FQD17P06TM
MOSFET P-CH 60V 12A DPAK
onsemi
17,286
In Stock
1 : ¥8.29000
Cut Tape (CT)
2,500 : ¥3.44421
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
12A (Tc)
10V
135mOhm @ 6A, 10V
4V @ 250µA
27 nC @ 10 V
±25V
900 pF @ 25 V
-
2.5W (Ta), 44W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
2,724
In Stock
1 : ¥43.02000
Cut Tape (CT)
2,000 : ¥20.95881
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (Tc)
6V, 10V
1.2mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
EPC2302
EPC2302
TRANS GAN 100V DIE .0018OHM
EPC
62,383
In Stock
1 : ¥54.27000
Cut Tape (CT)
3,000 : ¥30.13009
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
101A (Ta)
5V
1.8mOhm @ 50A, 5V
2.5V @ 14mA
23 nC @ 5 V
+6V, -4V
3200 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
7-QFN (3x5)
7-PowerWQFN
PowerPak SO-8L
SQJ418EP-T1_GE3
MOSFET N-CH 100V 48A PPAK SO-8
Vishay Siliconix
4,685
In Stock
1 : ¥9.36000
Cut Tape (CT)
3,000 : ¥3.86186
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
48A (Tc)
10V
14mOhm @ 10A, 10V
3.5V @ 250µA
35 nC @ 10 V
±20V
1700 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-PowerTDFN, 5 Leads
NVMFS6H800NWFT1G
MOSFET N-CH 80V 28A/203A 5DFN
onsemi
1,465
In Stock
1 : ¥35.14000
Cut Tape (CT)
1,500 : ¥18.17700
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
28A (Ta), 203A (Tc)
10V
2.1mOhm @ 50A, 10V
4V @ 330µA
85 nC @ 10 V
±20V
5530 pF @ 40 V
-
3.8W (Ta), 200W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
5-DFNW (4.9x5.9) (8-SOFL-WF)
8-PowerTDFN, 5 Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.