Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-HEXFET®StrongIRFET™2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Box (TB)Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
1.2A (Ta)14.1A (Ta)20A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V3.7V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
3.85mOhm @ 60A, 10V7mOhm @ 9A, 10V250mOhm @ 930mA, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)3V @ 250µA3.3V @ 52µA
Gate Charge (Qg) (Max) @ Vgs
3.9 nC @ 4.5 V22.6 nC @ 10 V68 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
110 pF @ 15 V1320 pF @ 15 V3000 pF @ 30 V
Power Dissipation (Max)
540mW (Ta)800mW (Ta)3W (Ta), 107W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
Micro3™/SOT-23PG-TO252-3U-DFN2020-6 (Type F)
Package / Case
6-UDFN Exposed PadTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML2402TRPBF
MOSFET N-CH 20V 1.2A SOT23
Infineon Technologies
62,658
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87569
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
20 V
1.2A (Ta)
2.7V, 4.5V
250mOhm @ 930mA, 4.5V
700mV @ 250µA (Min)
3.9 nC @ 4.5 V
±12V
110 pF @ 15 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
U-DFN2020-6 Type F
DMT3006LFDF-7
MOSFET N-CH 30V 14.1A 6UDFN
Diodes Incorporated
23,955
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.37068
Tape & Box (TB)
-
Cut Tape (CT)
Digi-Reel®
Tape & Box (TB)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
14.1A (Ta)
3.7V, 10V
7mOhm @ 9A, 10V
3V @ 250µA
22.6 nC @ 10 V
±20V
1320 pF @ 15 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
1,430
In Stock
1 : ¥7.88000
Cut Tape (CT)
2,000 : ¥3.27329
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
20A (Ta), 120A (Tc)
6V, 10V
3.85mOhm @ 60A, 10V
3.3V @ 52µA
68 nC @ 10 V
±20V
3000 pF @ 30 V
-
3W (Ta), 107W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.