Single FETs, MOSFETs

Results: 5
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedInfineon TechnologiesonsemiSTMicroelectronics
Series
-OptiMOS™PowerTrench®STripFET™ II
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Current - Continuous Drain (Id) @ 25°C
6A (Ta)7A (Ta), 37A (Tc)9.9A (Ta), 50A (Tc)35A (Tc)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 50A, 10V13.5mOhm @ 50A, 10V17mOhm @ 17.5A, 10V20mOhm @ 20A, 10V68mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.2V @ 20µA2.5V @ 250µA2.7V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.3 nC @ 10 V29 nC @ 10 V33 nC @ 4.5 V40 nC @ 10 V68 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
502 pF @ 30 V1350 pF @ 25 V1700 pF @ 25 V2300 pF @ 30 V2890 pF @ 25 V
Power Dissipation (Max)
2.1W (Ta), 60W (Tc)2.12W (Ta)50W (Tc)80W (Tc)115W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
DPAKPG-TO252-3-11TO-252 (DPAK)TO-252-3TO-252AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-252-2
DMN6068LK3-13
MOSFET N-CH 60V 6A TO252-3
Diodes Incorporated
25,672
In Stock
732,500
Factory
1 : ¥4.43000
Cut Tape (CT)
2,500 : ¥1.49527
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6A (Ta)
4.5V, 10V
68mOhm @ 12A, 10V
3V @ 250µA
10.3 nC @ 10 V
±20V
502 pF @ 30 V
-
2.12W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD50N06S4L12ATMA2
MOSFET N-CH 60V 50A TO252-31
Infineon Technologies
11,070
In Stock
1 : ¥9.36000
Cut Tape (CT)
2,500 : ¥3.88564
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
12mOhm @ 50A, 10V
2.2V @ 20µA
40 nC @ 10 V
±16V
2890 pF @ 25 V
-
50W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD35NF06LT4
MOSFET N-CH 60V 35A DPAK
STMicroelectronics
10,342
In Stock
1 : ¥12.64000
Cut Tape (CT)
2,500 : ¥5.24498
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
35A (Tc)
4.5V, 10V
17mOhm @ 17.5A, 10V
2.5V @ 250µA
33 nC @ 4.5 V
±16V
1700 pF @ 25 V
-
80W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FDD13AN06A0
MOSFET N-CH 60V 9.9A/50A DPAK
onsemi
12,159
In Stock
1 : ¥14.29000
Cut Tape (CT)
2,500 : ¥6.44269
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
9.9A (Ta), 50A (Tc)
6V, 10V
13.5mOhm @ 50A, 10V
4V @ 250µA
29 nC @ 10 V
±20V
1350 pF @ 25 V
-
115W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252, (D-Pak)
AOD442
MOSFET N-CH 60V 7A/37A TO252
Alpha & Omega Semiconductor Inc.
336,462
In Stock
1 : ¥4.27000
Cut Tape (CT)
2,500 : ¥1.99088
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
7A (Ta), 37A (Tc)
4.5V, 10V
20mOhm @ 20A, 10V
2.7V @ 250µA
68 nC @ 10 V
±20V
2300 pF @ 30 V
-
2.1W (Ta), 60W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.