Single FETs, MOSFETs

Results: 4
Manufacturer
Nexperia USA Inc.Rohm SemiconductorVishay Siliconix
Series
-TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V20 V30 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)2.6A (Ta)4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 2.5V1.8V, 4.5V2.5V, 4.5V
Rds On (Max) @ Id, Vgs
32mOhm @ 5.3A, 4.5V57mOhm @ 3.6A, 4.5V1.2Ohm @ 100mA, 2.5V4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA1V @ 1mA1V @ 250µA1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.72 nC @ 4.5 V5.5 nC @ 4.5 V18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V46 pF @ 15 V1100 pF @ 6 V
Power Dissipation (Max)
150mW (Ta)260mW (Ta), 830mW (Tc)710mW (Ta)750mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
EMT3F (SOT-416FL)SOT-23-3 (TO-236)SOT-323
Package / Case
SC-70, SOT-323SC-89, SOT-490TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
EMT3F
RE1C002UNTCL
MOSFET N-CH 20V 200MA EMT3F
Rohm Semiconductor
1,344,601
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.19539
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 2.5V
1.2Ohm @ 100mA, 2.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
-
-
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
SOT-23-3
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
153,782
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.87982
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2333DS-T1-E3
MOSFET P-CH 12V 4.1A SOT23-3
Vishay Siliconix
49,954
In Stock
1 : ¥6.81000
Cut Tape (CT)
3,000 : ¥2.58532
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
4.1A (Ta)
1.8V, 4.5V
32mOhm @ 5.3A, 4.5V
1V @ 250µA
18 nC @ 4.5 V
±8V
1100 pF @ 6 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-323
NX3008PBKW,115
MOSFET P-CH 30V 200MA SOT323
Nexperia USA Inc.
40,237
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.46763
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
200mA (Ta)
2.5V, 4.5V
4.1Ohm @ 200mA, 4.5V
1.1V @ 250µA
0.72 nC @ 4.5 V
±8V
46 pF @ 15 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.