Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.onsemi
Series
-HEXFET®PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
40 V75 V80 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)66A (Tc)195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
2.6mOhm @ 100A, 10V7mOhm @ 21A, 10V75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 120µA2.5V @ 250µA3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 10 V41 nC @ 10 V407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 20 V2940 pF @ 40 V13660 pF @ 25 V
Power Dissipation (Max)
615mW (Ta), 7.5W (Tc)57W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-PQFN (3.3x3.3), Power33TO-220ABTO-236AB
Package / Case
8-PowerWDFNTO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
PMV60ENEAR
MOSFET N-CH 40V 3A TO236AB
Nexperia USA Inc.
36,995
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.80459
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
3A (Ta)
4.5V, 10V
75mOhm @ 3A, 10V
2.5V @ 250µA
5 nC @ 10 V
±20V
180 pF @ 20 V
-
615mW (Ta), 7.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
8-PQFN Pin View
FDMC007N08LC
MOSFET N-CHANNEL 80V 66A 8PQFN
onsemi
8,597
In Stock
1 : ¥17.98000
Cut Tape (CT)
3,000 : ¥7.52735
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
66A (Tc)
4.5V, 10V
7mOhm @ 21A, 10V
2.5V @ 120µA
41 nC @ 10 V
±20V
2940 pF @ 40 V
-
57W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (3.3x3.3), Power33
8-PowerWDFN
TO-220AB PKG
IRFB7730PBF
MOSFET N-CH 75V 195A TO220AB
Infineon Technologies
5,718
In Stock
1 : ¥18.72000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
195A (Tc)
6V, 10V
2.6mOhm @ 100A, 10V
3.7V @ 250µA
407 nC @ 10 V
±20V
13660 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.