Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SI7617DN-T1-GE3 MOSFET P-CH 30V 35A PPAK1212-8 Vishay Siliconix	186,234 In Stock	1 : ¥4.93000 Cut Tape (CT) 3,000 : ¥2.61678 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	35A (Tc)	4.5V, 10V	12.3mOhm @ 13.9A, 10V	2.5V @ 250µA	59 nC @ 10 V	±25V	1800 pF @ 15 V	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
DMN65D8L-7 MOSFET N-CH 60V 310MA SOT23 Diodes Incorporated	370,263 In Stock 1,353,000 Factory	1 : ¥1.40000 Cut Tape (CT) 3,000 : ¥0.23991 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	310mA (Ta)	5V, 10V	3Ohm @ 115mA, 10V	2V @ 250µA	0.87 nC @ 10 V	±20V	22 pF @ 25 V	-	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
PXN012-60QLJ PXN012-60QL/SOT8002/MLPAK33 Nexperia USA Inc.	32,737 In Stock	1 : ¥4.43000 Cut Tape (CT) 3,000 : ¥1.56564 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	42A (Tc)	4.5V, 10V	11.5mOhm @ 10A, 10V	2.5V @ 1mA	18.77 nC @ 10 V	±20V	957 pF @ 30 V	-	34.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	MLPAK33	8-PowerVDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.