Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedRohm Semiconductor
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 200mA, 4.5V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1V @ 100µA1.5V @ 250µA
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V115 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)200mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-323UMT3F
Package / Case
SC-70, SOT-323SC-85
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
741,838
In Stock
1 : ¥2.38000
Cut Tape (CT)
3,000 : ¥0.40362
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
UMT3F
RU1C002ZPTCL
MOSFET P-CH 20V 200MA UMT3F
Rohm Semiconductor
157,231
In Stock
1 : ¥2.30000
Cut Tape (CT)
3,000 : ¥0.38482
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 4.5V
1.2Ohm @ 200mA, 4.5V
1V @ 100µA
1.4 nC @ 4.5 V
±10V
115 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
UMT3F
SC-85
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.