Single FETs, MOSFETs

Results: 7
Manufacturer
Infineon TechnologiesSTMicroelectronicsToshiba Semiconductor and StorageVishay Siliconix
Series
-HEXFET®OptiMOS™STripFET™ II
Packaging
BulkTube
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
200 V250 V
Current - Continuous Drain (Id) @ 25°C
8.1A (Tc)13A (Ta)14A (Tc)17A (Tc)18A (Tc)25A (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V150mOhm @ 11A, 10V165mOhm @ 8.5A, 10V180mOhm @ 11A, 10V250mOhm @ 6.5A, 10V280mOhm @ 8.4A, 10V450mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA4V @ 250µA4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V29 nC @ 10 V29.5 nC @ 10 V41 nC @ 10 V67 nC @ 10 V68 nC @ 10 V70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
770 pF @ 25 V1000 pF @ 25 V1100 pF @ 100 V1160 pF @ 25 V1300 pF @ 25 V2350 pF @ 100 V
Power Dissipation (Max)
3.1W (Ta), 125W (Tc)74W (Tc)90W (Tc)102W (Tc)125W (Tc)136W (Tc)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO220-3-1TO-220TO-220-3TO-220ABTO-263 (D2PAK)
Package / Case
TO-220-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF640NPBF
MOSFET N-CH 200V 18A TO220AB
Infineon Technologies
52,245
In Stock
1 : ¥6.81000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
150mOhm @ 11A, 10V
4V @ 250µA
67 nC @ 10 V
±20V
1160 pF @ 25 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220-3
IPP600N25N3GXKSA1
MOSFET N-CH 250V 25A TO220-3
Infineon Technologies
7,383
In Stock
1 : ¥23.73000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
25A (Tc)
10V
60mOhm @ 25A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
TO-220AB
IRF634PBF
MOSFET N-CH 250V 8.1A TO220AB
Vishay Siliconix
6,341
In Stock
1 : ¥9.69000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
8.1A (Tc)
10V
450mOhm @ 5.1A, 10V
4V @ 250µA
41 nC @ 10 V
±20V
770 pF @ 25 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRF640PBF
MOSFET N-CH 200V 18A TO220AB
Vishay Siliconix
2,156
In Stock
1 : ¥15.68000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
200 V
18A (Tc)
10V
180mOhm @ 11A, 10V
4V @ 250µA
70 nC @ 10 V
±20V
1300 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-263AB
IRF644SPBF
MOSFET N-CH 250V 14A D2PAK
Vishay Siliconix
418
In Stock
1 : ¥28.32000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
14A (Tc)
10V
280mOhm @ 8.4A, 10V
4V @ 250µA
68 nC @ 10 V
±20V
1300 pF @ 25 V
-
3.1W (Ta), 125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
79
In Stock
1 : ¥17.57000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
13A (Ta)
10V
250mOhm @ 6.5A, 10V
3.5V @ 1mA
25 nC @ 10 V
±20V
1100 pF @ 100 V
-
102W (Tc)
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220-3
STP17NF25
MOSFET N-CH 250V 17A TO220AB
STMicroelectronics
0
In Stock
Check Lead Time
1 : ¥11.08000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
17A (Tc)
10V
165mOhm @ 8.5A, 10V
4V @ 250µA
29.5 nC @ 10 V
±20V
1000 pF @ 25 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.