Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMTH6016LK3-13 MOSFET N-CH 60V 10.8 TO252 T&R Diodes Incorporated	3,070 In Stock 35,000 Factory	1 : ¥3.94000 Cut Tape (CT) 2,500 : ¥1.33862 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	10.8A (Ta), 46.9A (Tc)	4.5V, 10V	17mOhm @ 10A, 10V	3V @ 250µA	17 nC @ 10 V	±20V	864 pF @ 30 V	-	3.2W (Ta)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMPH6023SK3Q-13 MOSFET P-CHANNEL 60V 35A TO252 Diodes Incorporated	1,255 In Stock	1 : ¥10.02000 Cut Tape (CT) 2,500 : ¥4.15130 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	35A (Tc)	4.5V, 10V	33mOhm @ 10A, 10V	3V @ 250µA	53.1 nC @ 10 V	±20V	2569 pF @ 30 V	-	3.2W	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
AOSP32314 MOSFET N-CH 30V 14.5A 8SOIC Alpha & Omega Semiconductor Inc.	2,722 In Stock	1 : ¥5.34000 Cut Tape (CT) 3,000 : ¥1.76511 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	14.5A (Ta)	4.5V, 10V	9mOhm @ 14.5A, 10V	2.25V @ 250µA	32 nC @ 10 V	±20V	1420 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.