Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesInternational RectifierLittelfuse Inc.
Series
HEXFET®StrongIRFET™2TrenchT2™
Packaging
BulkTube
Product Status
ActiveDiscontinued at Digi-Key
Drain to Source Voltage (Vdss)
40 V75 V200 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)44A (Ta), 201A (Tc)195A (Tc)500A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V
Rds On (Max) @ Id, Vgs
1.15mOhm @ 100A, 10V1.6mOhm @ 100A, 10V1.7mOhm @ 195A, 10V1.85mOhm @ 195A, 10V75mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
3.4V @ 249µA3.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
123 nC @ 10 V315 nC @ 10 V330 nC @ 10 V405 nC @ 10 V570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2159 pF @ 25 V8920 pF @ 25 V15000 pF @ 20 V19230 pF @ 50 V25000 pF @ 25 V
Power Dissipation (Max)
3.8W (Ta), 375W (Tc)214W (Tc)380W (Tc)520W (Tc)1000W (Tc)
Supplier Device Package
PG-TO220-3-U05TO-247 (IXTH)TO-247AC
Package / Case
TO-220-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
568
In Stock
1 : ¥16.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
44A (Ta), 201A (Tc)
6V, 10V
1.15mOhm @ 100A, 10V
3.4V @ 249µA
315 nC @ 10 V
±20V
15000 pF @ 20 V
-
3.8W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-U05
TO-220-3
TO-247-3 AC EP
IRFP250MPBF
MOSFET N-CH 200V 30A TO247AC
Infineon Technologies
8,123
In Stock
1 : ¥19.87000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
30A (Tc)
10V
75mOhm @ 18A, 10V
4V @ 250µA
123 nC @ 10 V
±20V
2159 pF @ 25 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
IFEINFAIGW50N65F5XKSA1
AUIRFP4004
MOSFET N-CH 40V 195A TO247AC
International Rectifier
152
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
195A (Tc)
10V
1.7mOhm @ 195A, 10V
4V @ 250µA
330 nC @ 10 V
±20V
8920 pF @ 25 V
-
380W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
TO-247-AD-EP-(H)
IXTH500N04T2
MOSFET N-CH 40V 500A TO247
Littelfuse Inc.
0
In Stock
Check Lead Time
300 : ¥88.59787
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
40 V
500A (Tc)
10V
1.6mOhm @ 100A, 10V
3.5V @ 250µA
405 nC @ 10 V
±20V
25000 pF @ 25 V
-
1000W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247 (IXTH)
TO-247-3
TO-247-3 AC EP
IRFP4368PBF
MOSFET N-CH 75V 195A TO247AC
Infineon Technologies
0
In Stock
Discontinued at Digi-Key
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
75 V
195A (Tc)
10V
1.85mOhm @ 195A, 10V
4V @ 250µA
570 nC @ 10 V
±20V
19230 pF @ 50 V
-
520W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.