Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NTHL040N120SC1 SICFET N-CH 1200V 60A TO247-3 onsemi	283 In Stock	1 : ¥162.47000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	56mOhm @ 35A, 20V	4.3V @ 10mA	106 nC @ 20 V	+25V, -15V	1781 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPP60R360P7XKSA1 MOSFET N-CH 650V 9A TO220-3 Infineon Technologies	500 In Stock	1 : ¥12.31000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	41W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.