Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesSTMicroelectronicsVishay Siliconix
Series
-MDmesh™ M5OptiMOS™ 5STripFET™ H6TrenchFET® Gen III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V300 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)10.3A (Ta)12.6A (Tc)40A (Tc)53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
4mOhm @ 20A, 10V13mOhm @ 10A, 10V15mOhm @ 4.5A, 10V19mOhm @ 9A, 10V40mOhm @ 26.5A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA (Min)2.2V @ 250µA2.3V @ 36µA3V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.6 nC @ 4.5 V24 nC @ 4.5 V42 nC @ 10 V68.6 nC @ 10 V95 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V2615 pF @ 25 V3100 pF @ 30 V3426 pF @ 20 V4240 pF @ 100 V
Power Dissipation (Max)
1W (Ta)3W (Ta)4.8W (Tc)69W (Tc)250W (Tc)
Supplier Device Package
8-SOICPG-TSDSON-8-FLPOWERDI3333-8PowerFlat™ (3.3x3.3)TO-263 (D2PAK)
Package / Case
8-PowerTDFN8-PowerVDFN8-SOIC (0.154", 3.90mm Width)TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4435FDY-T1-GE3
MOSFET P-CH 30V 12.6A 8SOIC
Vishay Siliconix
33,869
In Stock
1 : ¥3.86000
Cut Tape (CT)
2,500 : ¥1.03815
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
12.6A (Tc)
4.5V, 10V
19mOhm @ 9A, 10V
2.2V @ 250µA
42 nC @ 10 V
±20V
1500 pF @ 15 V
-
4.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8 PowerTDFN
BSZ040N06LS5ATMA1
MOSFET N-CH 60V 40A TSDSON
Infineon Technologies
71,807
In Stock
1 : ¥13.22000
Cut Tape (CT)
5,000 : ¥5.73136
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
40A (Tc)
4.5V, 10V
4mOhm @ 20A, 10V
2.3V @ 36µA
6.6 nC @ 4.5 V
±20V
3100 pF @ 30 V
-
69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
8-PowerFlat
STL9P3LLH6
MOSFET P-CH 30V 9A POWERFLAT
STMicroelectronics
66,637
In Stock
1 : ¥8.54000
Cut Tape (CT)
3,000 : ¥3.51776
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
9A (Tc)
4.5V, 10V
15mOhm @ 4.5A, 10V
1V @ 250µA (Min)
24 nC @ 4.5 V
±20V
2615 pF @ 25 V
-
3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerFlat™ (3.3x3.3)
8-PowerVDFN
PowerDI3333-8
DMP4013LFGQ-7
MOSFET P-CH 40V 10.3A PWRDI3333
Diodes Incorporated
2,714
In Stock
56,000
Factory
1 : ¥10.75000
Cut Tape (CT)
2,000 : ¥2.91756
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
10.3A (Ta)
4.5V, 10V
13mOhm @ 10A, 10V
3V @ 250µA
68.6 nC @ 10 V
±20V
3426 pF @ 20 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
D2Pak
STB45N30M5
NCHANNEL 300 V 0.037 OHM TYP. 53
STMicroelectronics
609
In Stock
1 : ¥53.45000
Cut Tape (CT)
1,000 : ¥30.32472
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
53A (Tc)
10V
40mOhm @ 26.5A, 10V
5V @ 250µA
95 nC @ 10 V
±25V
4240 pF @ 100 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 5

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.