Single FETs, MOSFETs

Results: 2
Manufacturer
onsemiVishay Siliconix
Series
QFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V5V, 10V
Rds On (Max) @ Id, Vgs
280mOhm @ 4.5A, 10V1.38Ohm @ 750mA, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250µA2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V21 nC @ 5 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 100 V1080 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 55W (Tc)3.5W (Ta), 19W (Tc)
Supplier Device Package
PowerPAK® SC-70-6TO-252AA
Package / Case
PowerPAK® SC-70-6TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPak SC-70-6 Single
SIA456DJ-T1-GE3
MOSFET N-CH 200V 2.6A PPAK SC70
Vishay Siliconix
21,607
In Stock
1 : ¥7.39000
Cut Tape (CT)
3,000 : ¥3.05599
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
2.6A (Tc)
1.8V, 4.5V
1.38Ohm @ 750mA, 4.5V
1.4V @ 250µA
14.5 nC @ 10 V
±16V
350 pF @ 100 V
-
3.5W (Ta), 19W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
TO-252AA
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
onsemi
1,295
In Stock
1 : ¥7.14000
Cut Tape (CT)
2,500 : ¥2.72240
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
9A (Tc)
5V, 10V
280mOhm @ 4.5A, 10V
2V @ 250µA
21 nC @ 5 V
±20V
1080 pF @ 25 V
-
2.5W (Ta), 55W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.