Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

NX7002AK,215 MOSFET N-CH 60V 190MA TO236AB Nexperia USA Inc.	501,795 In Stock	1 : ¥1.56000 Cut Tape (CT) 3,000 : ¥0.26370 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	190mA (Ta)	5V, 10V	4.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.43 nC @ 4.5 V	±20V	17 pF @ 10 V	-	265mW (Ta), 1.33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
IRFR3410TRPBF MOSFET N-CH 100V 31A DPAK Infineon Technologies	16,055 In Stock	1 : ¥7.80000 Cut Tape (CT) 2,000 : ¥3.23253 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	31A (Tc)	10V	39mOhm @ 18A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	1690 pF @ 25 V	-	3W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC520N15NS3GATMA1 MOSFET N-CH 150V 21A TDSON-8-5 Infineon Technologies	8,210 In Stock	1 : ¥9.11000 Cut Tape (CT) 5,000 : ¥3.58094 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	21A (Tc)	8V, 10V	52mOhm @ 18A, 10V	4V @ 35µA	12 nC @ 10 V	±20V	890 pF @ 75 V	-	57W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.