Single FETs, MOSFETs

Results: 2
Series
CoolMOS™CoolMOS™ P7
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
600 V650 V
Current - Continuous Drain (Id) @ 25°C
13.8A (Tc)18A (Tc)
Rds On (Max) @ Id, Vgs
180mOhm @ 5.6A, 10V280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 430µA4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V1081 pF @ 400 V
Power Dissipation (Max)
72W (Tc)104W (Tc)
Supplier Device Package
PG-TO220-3PG-TO247-3
Package / Case
TO-220-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TO247-3
IPW60R180P7XKSA1
MOSFET N-CH 650V 18A TO247-3
Infineon Technologies
225
In Stock
1 : ¥25.12000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
18A (Tc)
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
-
72W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
TO-220-3
IPP60R280P6XKSA1
MOSFET N-CH 600V 13.8A TO220-3
Infineon Technologies
0
In Stock
50 : ¥16.50820
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
280mOhm @ 6.5A, 10V
3.5V @ 430µA
43 nC @ 10 V
±20V
950 pF @ 100 V
-
104W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
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of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.