Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMN26D0UT-7 MOSFET N-CH 20V 230MA SOT523 Diodes Incorporated	70,310 In Stock 2,253,000 Factory	1 : ¥2.63000 Cut Tape (CT) 3,000 : ¥0.44806 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	230mA (Ta)	1.2V, 4.5V	3Ohm @ 100mA, 4.5V	1V @ 250µA	-	±10V	14.1 pF @ 15 V	-	300mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-523	SOT-523
PMPB20XPEZ MOSFET P-CH 20V 7.2A DFN2020MD-6 Nexperia USA Inc.	18,694 In Stock	1 : ¥3.78000 Cut Tape (CT) 3,000 : ¥1.27216 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	7.2A (Ta)	1.8V, 4.5V	23.5mOhm @ 7.2A, 4.5V	900mV @ 250µA	45 nC @ 4.5 V	±12V	2945 pF @ 10 V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
RTF016N05FRATL MOSFET N-CH 45V 1.6A TUMT3 Rohm Semiconductor	11,029 In Stock	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥1.82236 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	45 V	1.6A (Ta)	-	190mOhm @ 1.6A, 4.5V	1.5V @ 1mA	2.3 nC @ 4.5 V	±12V	150 pF @ 10 V	-	800mW	150°C	Automotive	AEC-Q101	Surface Mount	TUMT3	3-SMD, Flat Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.