Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesVishay SiliconixWolfspeed, Inc.
Series
EE-SeriesOptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
100 V800 V1200 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)32A (Tc)180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V10V15V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 100A, 10V97.5mOhm @ 17.9A, 15V1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.6V @ 5mA3.8V @ 279µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V55 nC @ 15 V210 nC @ 10 V
Vgs (Max)
+19V, -8V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
321 pF @ 100 V1480 pF @ 1000 V15600 pF @ 50 V
Power Dissipation (Max)
29W (Tc)145W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO263-7TO-220 Full PackTO-247-4L
Package / Case
TO-220-3 Full PackTO-247-4TO-263-7, D2PAK (6 Leads + Tab)
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Mounting Type
Supplier Device Package
Package / Case
TO-263-7, D2Pak
IPB017N10N5ATMA1
MOSFET N-CH 100V 180A TO263-7
Infineon Technologies
2,259
In Stock
1 : ¥50.90000
Cut Tape (CT)
1,000 : ¥26.31407
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
180A (Tc)
6V, 10V
1.7mOhm @ 100A, 10V
3.8V @ 279µA
210 nC @ 10 V
±20V
15600 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
Surface Mount
PG-TO263-7
TO-263-7, D2PAK (6 Leads + Tab)
C3M0065100K
E3M0075120K
1200V AUTOMOTIVE SIC 75MOHM FET
Wolfspeed, Inc.
255
In Stock
1 : ¥170.85000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
32A (Tc)
15V
97.5mOhm @ 17.9A, 15V
3.6V @ 5mA
55 nC @ 15 V
+19V, -8V
1480 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
Automotive
Through Hole
TO-247-4L
TO-247-4
SIHA5N80AE-GE3
SIHA5N80AE-GE3
E SERIES POWER MOSFET THIN-LEAD
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥10.92000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
3A (Tc)
10V
1.35Ohm @ 1.5A, 10V
4V @ 250µA
16.5 nC @ 10 V
±30V
321 pF @ 100 V
-
29W (Tc)
-55°C ~ 150°C (TJ)
-
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.