Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

DMN6075S-7 MOSFET N-CH 60V 2A SOT23 Diodes Incorporated	62,251 In Stock 312,000 Factory	1 : ¥3.04000 Cut Tape (CT) 3,000 : ¥0.54956 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2A (Ta)	4.5V, 10V	85mOhm @ 3.2A, 10V	3V @ 250µA	12.3 nC @ 10 V	±20V	606 pF @ 20 V	-	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SSM3J372R,LF MOSFET P-CH 30V 6A SOT23F Toshiba Semiconductor and Storage	154,413 In Stock	1 : ¥3.37000 Cut Tape (CT) 3,000 : ¥0.60717 Tape & Reel (TR)	U-MOSVI	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	6A (Ta)	1.8V, 10V	42mOhm @ 5A, 10V	1.2V @ 1mA	8.2 nC @ 4.5 V	+12V, -6V	560 pF @ 15 V	-	1W (Ta)	150°C	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
BSC0402NSATMA1 MOSFET N-CH 150V 80A TDSON-8 Infineon Technologies	0 In Stock	1 : ¥23.07000 Cut Tape (CT) 5,000 : ¥10.76818 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	150 V	80A (Tc)	8V, 10V	9.3mOhm @ 40A, 10	4.6V @ 107µA	33 nC @ 10 V	±20V	2400 pF @ 75 V	-	139W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.