Single FETs, MOSFETs

Results: 2
Series
U-MOSIIIU-MOSVII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
250mA (Ta)1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.5V, 4.5V
Rds On (Max) @ Id, Vgs
235mOhm @ 800mA, 4.5V1.1Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 100µA1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.34 nC @ 4.5 V1 nC @ 4.5 V
Vgs (Max)
±8V±10V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 10 V55 pF @ 10 V
Supplier Device Package
CST3CST3C
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
239,840
In Stock
1 : ¥2.05000
Cut Tape (CT)
10,000 : ¥0.34117
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
250mA (Ta)
1.2V, 4.5V
1.1Ohm @ 150mA, 4.5V
1V @ 100µA
0.34 nC @ 4.5 V
±10V
36 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
CST3C
SC-101, SOT-883
185,869
In Stock
1 : ¥3.12000
Cut Tape (CT)
10,000 : ¥0.43100
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.4A (Ta)
1.5V, 4.5V
235mOhm @ 800mA, 4.5V
1V @ 1mA
1 nC @ 4.5 V
±8V
55 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
CST3
SC-101, SOT-883
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.