FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

CAB008M12GM3 SIC 2N-CH 1200V Wolfspeed, Inc.	37 In Stock	1 : ¥1,436.72000 Tray	WolfPACK™	Tray	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	-	10.4mOhm @ 150A, 15V	3.6V @ 46mA	472nC @ 15V	13600pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	-
CCB016M12GM3 SIC, MODULE, 16M,1200V, 48 MM, G Wolfspeed, Inc.	41 In Stock	1 : ¥2,613.92000 Tray	-	Tray	Active	Silicon Carbide (SiC)	6 N-Channel	-	1200V (1.2kV)	50A (Tj)	20.8mOhm @ 50A, 15V	3.9V @ 23mA	236nC @ 15V	6700pF @ 1000V	10mW	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	Module
BSM120D12P2C005 MOSFET 2N-CH 1200V 120A MODULE Rohm Semiconductor	11 In Stock	1 : ¥3,244.68000 Bulk	-	Bulk	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	120A (Tc)	-	2.7V @ 22mA	-	14000pF @ 10V	780W	-40°C ~ 150°C (TJ)	-	-	-	Module	Module
MSCSM170HM45CT3AG SIC 4N-CH 1700V 64A Microchip Technology	3 In Stock	1 : ¥2,631.98000 Bulk	-	Bulk	Active	Silicon Carbide (SiC)	4 N-Channel (Full Bridge)	-	1700V (1.7kV)	64A (Tc)	45mOhm @ 30A, 20V	3.2V @ 2.5mA	178nC @ 20V	3300pF @ 1000V	319W (Tc)	-40°C ~ 175°C (TJ)	-	-	Chassis Mount	Module	-
CAB016M12FM3T SIC 2N-CH 1200V 78A MODULE Wolfspeed, Inc.	2 In Stock	1 : ¥1,226.96000 Box	-	Box	Active	Silicon Carbide (SiC)	2 N-Channel (Half Bridge)	-	1200V (1.2kV)	78A (Tj)	21.3mOhm @ 80A, 15V	3.6V @ 23mA	236nC @ 15V	6600pF @ 800V	-	-40°C ~ 150°C (TJ)	-	-	Chassis Mount	Module	Module

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.