Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF540NPBF MOSFET N-CH 100V 33A TO220AB Infineon Technologies	135,779 In Stock	1 : ¥7.14000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTP44N10T MOSFET N-CH 100V 44A TO220AB Littelfuse Inc.	5,221 In Stock	1 : ¥15.68000 Tube	Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	44A (Tc)	10V	30mOhm @ 22A, 10V	4.5V @ 25µA	33 nC @ 10 V	±30V	1262 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IRF510PBF MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	46,225 In Stock	1 : ¥6.24000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.