Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SIS892DN-T1-GE3 MOSFET N-CH 100V 30A PPAK1212-8 Vishay Siliconix	3,753 In Stock	1 : ¥12.56000 Cut Tape (CT) 3,000 : ¥5.20649 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	30A (Tc)	4.5V, 10V	29mOhm @ 10A, 10V	3V @ 250µA	21.5 nC @ 10 V	±20V	611 pF @ 50 V	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
STW9N150 MOSFET N-CH 1500V 8A TO247-3 STMicroelectronics	62 In Stock	1 : ¥74.63000 Tube	PowerMESH™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1500 V	8A (Tc)	10V	2.5Ohm @ 4A, 10V	5V @ 250µA	89.3 nC @ 10 V	±30V	3255 pF @ 25 V	-	320W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
SI4090DY-T1-GE3 MOSFET N-CH 100V 19.7A 8SO Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥11.74000 Cut Tape (CT) 2,500 : ¥4.86694 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	19.7A (Tc)	6V, 10V	10mOhm @ 15A, 10V	3.3V @ 250µA	69 nC @ 10 V	±20V	2410 pF @ 50 V	-	3.5W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.