Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
Drain to Source Voltage (Vdss)
30 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 350mA, 4.5V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.1V @ 250µA1.5V @ 250µA
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V50 pF @ 15 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)300mW (Ta)
Supplier Device Package
SOT-23-3SOT-323
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
NX3008NBKW,115
MOSFET N-CH 30V 350MA SOT323
Nexperia USA Inc.
634,610
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.33879
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
350mA (Ta)
1.8V, 4.5V
1.4Ohm @ 350mA, 4.5V
1.1V @ 250µA
0.68 nC @ 4.5 V
±8V
50 pF @ 15 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
BSS138TA
MOSFET N-CH 50V 200MA SOT23-3
Diodes Incorporated
13,717
In Stock
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.58848
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.