Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

AO3401A MOSFET P-CH 30V 4A SOT23-3L Alpha & Omega Semiconductor Inc.	746,759 In Stock	1 : ¥3.61000 Cut Tape (CT) 3,000 : ¥0.80147 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	4A (Ta)	2.5V, 10V	44mOhm @ 4.3A, 10V	1.3V @ 250µA	12.2 nC @ 4.5 V	±12V	1200 pF @ 15 V	-	1.4W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
SI4483ADY-T1-GE3 MOSFET P-CH 30V 19.2A 8SO Vishay Siliconix	26,308 In Stock	1 : ¥9.61000 Cut Tape (CT) 2,500 : ¥3.96132 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	19.2A (Tc)	4.5V, 10V	8.8mOhm @ 10A, 10V	2.6V @ 250µA	135 nC @ 10 V	±25V	3900 pF @ 15 V	-	2.9W (Ta), 5.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IPD042P03L3GATMA1 MOSFET P-CH 30V 70A TO252-3 Infineon Technologies	20,701 In Stock	1 : ¥14.70000 Cut Tape (CT) 2,500 : ¥6.64317 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	70A (Tc)	4.5V, 10V	4.2mOhm @ 70A, 10V	2V @ 270µA	175 nC @ 10 V	±20V	12400 pF @ 15 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.