Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLU024NPBF MOSFET N-CH 55V 17A IPAK Infineon Technologies	3,275 In Stock	1 : ¥6.98000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	4V, 10V	65mOhm @ 10A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	480 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
BSS138 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	199,839 In Stock	1 : ¥1.31000 Cut Tape (CT) 3,000 : ¥0.22873 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	-	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FQU13N06LTU MOSFET N-CH 60V 11A IPAK onsemi	0 In Stock	5,040 : ¥2.91800 Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	11A (Tc)	5V, 10V	115mOhm @ 5.5A, 10V	2.5V @ 250µA	6.4 nC @ 5 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 28W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.