Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BS170FTA MOSFET N-CH 60V 0.15MA SOT23-3 Diodes Incorporated	13,936 In Stock 285,000 Factory	1 : ¥5.42000 Cut Tape (CT) 3,000 : ¥2.04651 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	150µA (Ta)	10V	5Ohm @ 200mA, 10V	3V @ 1mA	-	±20V	60 pF @ 10 V	-	330mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SQA403EJ-T1_GE3 MOSFET P-CH 30V 10A PPAK SC70-6 Vishay Siliconix	15,090 In Stock	1 : ¥5.01000 Cut Tape (CT) 3,000 : ¥1.68659 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	10A (Tc)	4.5V, 10V	20mOhm @ 5A, 10V	2.5V @ 250µA	33 nC @ 10 V	±20V	1880 pF @ 10 V	-	13.6W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
RD3L140SPTL1 MOSFET P-CH 60V 14A TO252 Rohm Semiconductor	29,668 In Stock	1 : ¥13.55000 Cut Tape (CT) 2,500 : ¥5.60263 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	14A (Ta)	4V, 10V	84mOhm @ 14A, 10V	3V @ 1mA	27 nC @ 10 V	±20V	1900 pF @ 10 V	-	20W (Tc)	150°C (TJ)	-	-	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.