Single FETs, MOSFETs

Results: 2
Manufacturer
STMicroelectronicsTexas Instruments
Series
MESH OVERLAY™NexFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
30 V200 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 8V10V
Rds On (Max) @ Id, Vgs
15.1mOhm @ 8A, 8V160mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V24 nC @ 10 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V879 pF @ 15 V
Power Dissipation (Max)
16W (Tc)90W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
6-WSON (2x2)TO-220
Package / Case
6-WDFN Exposed PadTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
6-WSON
CSD17318Q2
MOSFET N-CH 30V 25A 6WSON
Texas Instruments
10,601
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.08057
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
25A (Tc)
2.5V, 8V
15.1mOhm @ 8A, 8V
1.2V @ 250µA
6 nC @ 4.5 V
±10V
879 pF @ 15 V
-
16W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
TO-220-3
STP19NF20
MOSFET N-CH 200V 15A TO220AB
STMicroelectronics
924
In Stock
1 : ¥11.58000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
15A (Tc)
10V
160mOhm @ 7.5A, 10V
4V @ 250µA
24 nC @ 10 V
±20V
800 pF @ 25 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.