Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedTexas InstrumentsToshiba Semiconductor and StorageVishay Siliconix
Series
-NexFET™TrenchFET®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
3.3A (Ta)4.1A (Ta)5A (Tc)36A (Tc)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V2.5V, 4.5V3V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 18A, 4.5V5.6mOhm @ 15A, 10V30mOhm @ 4A, 8V40mOhm @ 1.5A, 4.5V47mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1.2V @ 1mA1.2V @ 250µA1.8V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 4.5 V2.7 nC @ 4.5 V47 nC @ 8 V65 nC @ 5 V140 nC @ 10 V
Vgs (Max)
-6V±8V+10V, -8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
218 pF @ 10 V340 pF @ 15 V1400 pF @ 10 V4300 pF @ 10 V5250 pF @ 15 V
Power Dissipation (Max)
720mW1W (Ta)2.3W (Ta)4.8W (Ta), 57W (Tc)42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
6-WSON (2x2)8-TSON Advance (3.1x3.1)PowerPAK® 1212-8SU-WLB1010-4
Package / Case
4-UFBGA, WLBGA6-WDFN Exposed Pad8-PowerVDFNPowerPAK® 1212-8S
Stocking Options
Environmental Options
Media
Marketplace Product
5Results
Showing
of 5
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK 1212-8S
SISS27DN-T1-GE3
MOSFET P-CH 30V 50A PPAK 1212-8S
Vishay Siliconix
33,568
In Stock
1 : ¥6.65000
Cut Tape (CT)
3,000 : ¥2.52036
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
50A (Tc)
4.5V, 10V
5.6mOhm @ 15A, 10V
2.2V @ 250µA
140 nC @ 10 V
±20V
5250 pF @ 15 V
-
4.8W (Ta), 57W (Tc)
-50°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8S
PowerPAK® 1212-8S
CSD-6-SON Pkg
CSD17313Q2
MOSFET N-CH 30V 5A 6WSON
Texas Instruments
14,027
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥1.30867
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5A (Tc)
3V, 8V
30mOhm @ 4A, 8V
1.8V @ 250µA
2.7 nC @ 4.5 V
+10V, -8V
340 pF @ 15 V
-
2.3W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-WSON (2x2)
6-WDFN Exposed Pad
MOSFET N-CH 20V 3.3A U-WLB1010-4
DMN2044UCB4-7
MOSFET N-CH 20V 3.3A U-WLB1010-4
Diodes Incorporated
4,758
In Stock
9,000
Factory
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.57478
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.3A (Ta)
1.5V, 4.5V
40mOhm @ 1.5A, 4.5V
900mV @ 250µA
47 nC @ 8 V
±8V
1400 pF @ 10 V
-
720mW
-55°C ~ 150°C (TJ)
Surface Mount
U-WLB1010-4
4-UFBGA, WLBGA
MOSFET P-CH 20V 4.1A U-WLB1010-4
DMP2047UCB4-7
MOSFET P-CH 20V 4.1A U-WLB1010-4
Diodes Incorporated
8,933
In Stock
429,000
Factory
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.89630
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.1A (Ta)
2.5V, 4.5V
47mOhm @ 1A, 4.5V
1.2V @ 250µA
2.3 nC @ 4.5 V
-6V
218 pF @ 10 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
U-WLB1010-4
4-UFBGA, WLBGA
905
In Stock
1 : ¥6.49000
Cut Tape (CT)
5,000 : ¥2.33523
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
36A (Tc)
2.5V, 4.5V
4.7mOhm @ 18A, 4.5V
1.2V @ 1mA
65 nC @ 5 V
±12V
4300 pF @ 10 V
-
42W (Tc)
150°C (TJ)
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
Showing
of 5

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.