Single FETs, MOSFETs

Results: 2
Manufacturer
Rohm SemiconductorToshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 2.5V1.5V, 4.5V
Rds On (Max) @ Id, Vgs
42.7mOhm @ 3A, 4.5V1.2Ohm @ 100mA, 2.5V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V840 pF @ 10 V
Power Dissipation (Max)
150mW (Ta)1W (Ta)
Operating Temperature
150°C150°C (TJ)
Supplier Device Package
EMT3F (SOT-416FL)UF6
Package / Case
6-SMD, Flat LeadsSC-89, SOT-490
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EMT3F
RE1C002UNTCL
MOSFET N-CH 20V 200MA EMT3F
Rohm Semiconductor
1,237,358
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.19539
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
200mA (Ta)
1.2V, 2.5V
1.2Ohm @ 100mA, 2.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
EMT3F (SOT-416FL)
SC-89, SOT-490
6,000
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥0.87864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
42.7mOhm @ 3A, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
-
1W (Ta)
150°C
Surface Mount
UF6
6-SMD, Flat Leads
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.