Bipolar RF Transistors

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max)
3.7V4V4.5V
Frequency - Transition
40GHz45GHz60GHz
Noise Figure (dB Typ @ f)
0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz0.65dB @ 3.5GHz0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain
12.5dB16.5dB ~ 29dB26dB
Power - Max
120mW200mW240mW
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 30mA, 3V150 @ 15mA, 2.5V160 @ 35mA, 3V
Current - Collector (Ic) (Max)
40mA50mA70mA
Supplier Device Package
PG-SOT343-3DPG-SOT343-4-2
Stocking Options
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT-343 PKG
BFP842ESDH6327XTSA1
RF TRANS NPN 3.7V 60GHZ SOT343
Infineon Technologies
1,595
In Stock
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.67360
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
3.7V
60GHz
0.65dB @ 3.5GHz
26dB
120mW
150 @ 15mA, 2.5V
40mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4-2
SOT-343 PKG
BFP640H6327XTSA1
RF TRANS NPN 4.5V 40GHZ SOT343-4
Infineon Technologies
28,049
In Stock
1 : ¥4.35000
Cut Tape (CT)
3,000 : ¥1.55001
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
4.5V
40GHz
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
12.5dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-3D
SOT-343 PKG
BFP760H6327XTSA1
RF TRANS NPN 4V 45GHZ SOT343
Infineon Technologies
14,208
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥1.27252
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
4V
45GHz
0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz
16.5dB ~ 29dB
240mW
160 @ 35mA, 3V
70mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4-2
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of 3

Bipolar RF Transistors


Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.