Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

2N7002-TP MOSFET N-CH 60V 115MA SOT23 Micro Commercial Co	113,009 In Stock	1 : ¥1.40000 Cut Tape (CT) 3,000 : ¥0.24725 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	115mA (Ta)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±20V	50 pF @ 25 V	-	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
NX7002BKMYL MOSFET N-CH 60V 350MA DFN1006-3 Nexperia USA Inc.	42,766 In Stock	1 : ¥1.97000 Cut Tape (CT) 10,000 : ¥0.25153 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	350mA (Ta)	5V, 10V	2.8Ohm @ 200mA, 10V	2.1V @ 250µA	1 nC @ 10 V	±20V	23.6 pF @ 10 V	-	350mW (Ta), 3.1W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-883	SC-101, SOT-883
BSS84AKMB,315 MOSFET P-CH 50V 230MA DFN1006B-3 Nexperia USA Inc.	31,782 In Stock	1 : ¥3.20000 Cut Tape (CT) 10,000 : ¥0.47630 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	50 V	230mA (Ta)	10V	7.5Ohm @ 100mA, 10V	2.1V @ 250µA	0.35 nC @ 5 V	±20V	36 pF @ 25 V	-	360mW (Ta), 2.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006B-3	3-XFDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.